Our Facilities

The III-V epitaxial growth facilities:

Molecular Beam Epitaxy (MBE)

MBE within the facility is centered at Sheffield (for ferromagnetic semiconductors by MBE see separate Nottingham link). The Sheffield growth is based around three MBE machines (2 x V90 and V80). The full spectrum of III-V materials is covered (Ga, As, P, Al, Sb, N, Si, Be etc), with structures types including edge emitters, vertical cavity structures, quantum dot and quantum well devices, LEDs, lasers, telecoms wavelength devices, mid IR quantum cascade lasers. Further details can be found in the MBE capabilities download opposite.

MBE V90-1

Research staff involved are:

Dr Edmund Clarke (Head of MBE Growth)

edmund.clarke@sheffield.ac.uk

tel: +44 (0)114 222 5818

Dr Shiyong Zhang (MBE Growth)

shiyong.zhang@sheffield.ac.uk

tel: +44 (0)114 222 5818

Mr Richard Frith (MBE Growth)

r.frith@sheffield.ac.uk

tel: +44 (0)114 222 5870

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Metal Organic Chemical Vapour Deposition

MOCVD of arsenides and phosphides within the Facility is carried out at Sheffield (for wide band gap nitride growth see separate link). The Sheffield growth is based around two MOCVD machines, the 6 wafer Thomas Swan vertical reactor and the two wafer horizontal MR350 machine. A full spectrum of III-V materials is covered (Ga, As, P, Al, Si, Be etc) over wavelength ranges from the red to the mid-infrared. Structure types covered including edge and emitting and vertical cavity structures, disk VECSEL lasers, nanowires, epitaxial overgrowth structures, quantum dot and quantum well devices, quantum cascade lasers (the first by MOCVD). MOCVD capabilities

Research staff involved are:

Dr Andrey Krysa (MOCVD Growth)

a.krysa@sheffield.ac.uk

tel: +44 (0)114 222 5819

Mr Brett Harrison (MOCVD Growth)

b.a.harrison@sheffield.ac.uk

tel: +44 (0)114 222 5212

Mr David Morris (MOCVD Growth)

d.morris@sheffield.ac.uk

tel: +44 (0)114 222 5866

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Gallium Nitride Epitaxy

The principal contractor for nitride growth within the National Centre is the Cambridge Centre for Gallium Nitride at the University of Cambridge (for details see link to Cambridge Nitrides).

Cambridge GaN Reactor

Supply is also available from the University of Sheffield in areas of its specialities (for details see link to file attached Sheffield Nitrides).

 

Research staff involved are:

Professor Sir Colin Humphries (University of Cambridge)

colin.humphreys@msm.cam.ac.uk

tel: +44 (0)1223 334457

Dr Rachel Oliver (University of Cambridge)

rao28@cam.ac.uk

tel: +44 (0)1223 760750

Dr Menno Kappers (University of Cambridge)

mjk30@cam.ac.uk

tel: +44 (0)1223 334469

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Ferromagnetic Semiconductors

Ferromagnetic Semiconductors and Metal/Semiconductor hybrids are provided by our Nottingham Partner. This includes:

  • III-V ferromagnetic semiconductor materials and heterostructures of III-V ferromagnetic semiconductors and non-magnetic III-V semiconductors.
  • Epitaxial Ferromagnetic and non-magnetic Metal Films on III-V semiconductor substrates or III-V semiconductor substrates heterostructures.

It is anticipated that these materials will be of particular interest to researchers in fields such as semiconductor spintronics, fundamental and applied magnetism, spin injection and spin transport and other related emerging fields.

Ferromagnetic epitaxy Nottingham

 

Research staff involved are:

Dr Richard Campion (University of Nottingham)

richard.campion@nottingham.ac.uk

tel: +44 (0)115 951 5189

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