National Centre for III-V Technologies

email : p.a.houston@sheffield.ac.uk

tel: +44 (0) 114 222 5180

BSc. Physics (first class honours) 1972, University of Strathclyde; PhD 1976, University of Strathclyde. Research Scientist, GEC Hirst Research Centre 1975-1978, Lecturer, University of Sheffield (1978), Consultant Engineer, Bell-Northern Research (now Nortel), Ottawa, Canada, 1986-1987, Senior Lecturer (1987), Reader (1996). Professor (2003), MIEEE.

Research Activities

• Electronic materials and devices based on Si and Si/Ge substrates.
• Development of high-temperature GaN-based devices – electronics in hot/harsh environments.
• Study of high current effects in HBTs – current practical device operation speed and power limited by high current effects.
• Novel HFET structures in GaN based materials – for very high-power/high-frequency amplifiers.

email : m.skolnick@sheffield.ac.uk

tel: +44 (0) 114 222 4277

Professor Maurice Skolnick obtained his PhD in 1975 from the University of Oxford and then spent two years as a postdoctoral researcher at the Max-Planck-Institute, Grenoble. He then moved to the Royal Signals and Radar Establishment, Malvern in 1978, where he spent the next 13 years, in the last three years as a Senior Principal Scientific Officer (individual merit). In January 1991 he was appointed as Professor of Condensed Matter Physics at the University of Sheffield, where he continues up to the present day.

In addition to leading the Semiconductor Physics group at the University of Sheffield, he is the Research Director of the EPSRC National Centre for III-V Technologies, the UK centre for the fabrication of III-V semiconductor structures. In September 2001 he was awarded an EPSRC Senior Research Fellowship and in January 2002 received the Mott Medal and Prize of the Institute of Physics. He was the Chair of the Semiconductor Commission and a Vice-President of the International Union of Pure and Applied Physics from 2002 to 2005. In May 2009 he was elected to a Fellowship of the Royal Society, and in December 2011 was elected as a Foreign Member of the Russian Academy of Sciences. In October 2012, he was awarded a five year ERC Advanced Grant.

His principal research interests include the physics of semiconductor nanostructures, with particular emphasis on quantum dot, photonic structure and polariton physics. In December 2012, he has an h-index of 56 and has published nearly 600 papers with a total of 12000 citations. More details of his research can be found on his group web pages http://ldsd.group.shef.ac.uk.

email: r.hogg@sheffield.ac.uk

Tel: 0114 222 5168

email: b.stevens@sheffield.ac.uk

Research Associate

Ben received his PhD from the University of Sheffield in 2010, where he studied various advanced GaAs based lasers including regrown self-aligned stripe lasers, regrown DFB lasers and multi-section QD lasers.

He is currently engaged in the MOVPE growth of various structures within the EPSRC National Centre for III-V Technologies.  His research activities include;

·       Semiconductor disk lasers

·       Electrically pumped vertical external cavity surface emitting lasers

·       Photonic crystal surface emitting lasers

·       Selective area epitaxy

·       Quantum dots

·       Virtual substrates

·       III-V growth on Ge

email: k.kennedy@sheffield.ac.uk

(Research Technician)

Email: saurabh.kumar@sheffield.ac.uk

Bachelor of Technology in Electrical Engineering (Uttar Pradesh Technical University, India), MSc Nanoelectronics & Nanomechanics, (University of Sheffield, Sheffield, UK).

·        Process Engineer, Synergy i-Design, India (2005–2007)

·        Engineer, Utility PowerTech. Limited, India, (2007–2007)

·        Instrumentation Engineer, Nanophosphor Application Center, University of Allahabad (2007–2008)

Research Interests

·        Optoelectronic devices and their applications

·        Optoelectronic device fabrication

·        Photonic crystals and their applications

·        Material analysis and characterisation

·        Electron Microscopy

Publications:

In-Situ Fabrication of Three Dimensional Nickel Nanobeads by Electron Beam Induced Transformation, Thirunavukkarasu Gnanavel, Saurabh Kumar, and Günter Möbus, J Nanosci Nanotechnol. 2011 Feb;11(2):1019-24

email: a.atkinson@sheffield.ac.uk

Tel: 0114 222 5145