Molecular Beam Epitaxy (MBE)
MBE within the Facility is centred at Sheffield (for ferromagnetic semiconductors by MBE see separate Nottingham link). The Sheffield growth is based around two MBE machines (V90 and V80) with a second V90 to arrive in March 2011. The full spectrum of III-V materials is covered (Ga, As, P, Al, Sb, N, Si, Be etc), with structures types including edge emitting and vertical cavity structures, quantum dot and quantum well devices, LEDs, lasers, telecoms wavelength devices, mid IR quantum cascade lasers. Full details are given at MBE capabililties.