15th September 2014
Statement of Need for National
Centre for III-V Technologies
Following a review of Mid-Range Facilities (MRFs), EPSRC has launched a call for a statement of need for the renewal of the National Centre for III-V Technologies in 2015.
You are cordially invited to attend a community consultation meeting at the Birmingham NEC, Monday 15th September 2014.
The purpose of the meeting is to identify the present and future needs for materials epitaxy and device fabrication supply to the III-V community in the UK.
The meeting will be in the form of a workshop structured around the following topics, and further details and an agenda for the day will be confirmed shortly:
Device fabrication and integration technologies
III-Nitride wide band-gap materials and devices
Narrow band-gap materials and devices
Nanostructured Materials and Devices
For planning purposes, if you wish to attend the meeting please send a brief email to: email@example.com
We look forward to seeing you on the day and to fruitful discussions on the future direction and needs in our community.
The EPSRC National Centre for III-V Technologies plays a central role in enabling world class research in UK universities. It has wide ranging capabilities in epitaxy (MBE and MOCVD) and device fabrication. This web site provides a description of our capabilities, main achievements and how to access the Facility. As well as supporting UK university research we play an equally significant role in enabling developments in UK industry.
Our mission is to provide collaborative access to world class expertise and facilities, thus enabling top-rate scientific research in the physical, engineering and biomedical sciences. This is achieved by the provision of state-of-the-art epitaxial materials and characterization, advanced technologies for device fabrication, and the provision of custom opto-electronic and electronic devices.
The Facility is composed of four partners. The main contractor is based at Sheffield, with sub-contracting partners at Cambridge (GaN), Glasgow (nanoscale device fabrication) and Nottingham (ferromagnetic semiconductors). (See links to left for individual roles).